NXP Semiconductors MC9S12G User Manual

Electrical Characteristics
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 1187
A.2 I/O Characteristics
This section describes the characteristics of all I/O pins except EXTAL, XTAL, TEST, and supply pins.
1
The values for thermal resistance are achieved by package simulations
2
Per JEDEC JESD51-2 with the single layer board (JESD51-3) horizontal.J
3
Per JEDEC JESD51-6 with the board (JESD51-7) horizontal.
4
.Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured in
simulation on the top surface of the board near the package.
5
Thermal resistance between the die and the case top surface as measured in simulation by the cold plate method (MIL SPEC-883
Method 1012.1).
6
Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per
JEDEC JESD51-2. 
JT
is a useful value to use to estimate junction temperature in a steady state customer enviroment.
Table A-6. 3.3-V I/O Characteristics (Junction Temperature From –40C To +150C)
Conditions are 3.15 V < V
DD35
< 3.6 V junction temperature from –40C to +150C, unless otherwise noted
I/O Characteristics for all I/O pins except EXTAL, XTAL,TEST and supply pins.
Num C Rating Symbol Min Typ Max Unit
1 P Input high voltage V
IH
0.65*V
DD35
——V
2 T Input high voltage V
IH
——V
DD35
+0.3 V
3 P Input low voltage V
IL
— — 0.35*V
DD35
V
4 T Input low voltage V
IL
V
SS35
– 0.3 — — V
5 C Input hysteresis V
HYS
0.06*V
DD35
—0.3*V
DD35
mV
6 P Input leakage current (pins in high impedance input
mode)
1
V
in
= V
DD35
or V
SS35
+125C to < T
J
< 150C
+105C to < T
J
< 125
–40C to < T
J
< 105C
1
Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8°C to 12°C in the temperature range from 50C to 125C.
I
in
-1
-0.5
-0.4
—
—
—
1
0.5
0.4
A
7 P Output high voltage (pins in output mode)
I
OH
= –1.75 mA
V
OH
V
DD35
-0.4 — — V
8 C Output low voltage (pins in output mode)
I
OL
= +1.75 mA
V
OL
——
0.4
V
9 P Internal pull up device current
V
IH
min > input voltage > V
IL
max
I
PUL
-1
—
–70
A
10 P Internal pull down device current
V
IH
min > input voltage > V
IL
max
I
PDH
1
—
70
A
11 D Input capacitance C
in
—7—pF
12 T Injection current
2
Single pin limit
Total device limit, sum of all injected currents
2
Refer to Section A.1.4, “Current Injection” for more details
I
ICS
I
ICP
–2.5
–25
—
2.5
25
mA

NXP Semiconductors MC9S12G Specifications

General

Brand	NXP Semiconductors
Model	MC9S12G
Category	Microcontrollers
Language	English