MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 765
Chapter 24
16 KByte Flash Module (S12FTMRG16K1V1)
24.1 Introduction
The FTMRG16K1 module implements the following:
• 16Kbytes of P-Flash (Program Flash) memory
• 512 bytes of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
The Flash memory may be read as bytes and aligned words. Read access time is one bus cycle for bytes
and aligned words. For misaligned words access, the CPU has to perform twice the byte read access
command. For Flash memory, an erased bit reads 1 and a programmed bit reads 0.
Table 24-1. Revision History
Revision
Number
Revision
Date
Sections
Affected
Description of Changes
V01.04 17 Jun 2010 24.4.6.1/24-795
24.4.6.2/24-796
24.4.6.3/24-796
24.4.6.14/24-80
6
Clarify Erase Verify Commands Descriptions related to the bits MGSTAT[1:0]
of the register FSTAT.
V01.05 20 aug 2010 24.4.6.2/24-796
24.4.6.12/24-80
3
24.4.6.13/24-80
5
Updated description of the commands RD1BLK, MLOADU and MLOADF
Rev.1.27 31 Jan 2011 24.3.2.9/24-781 Updated description of protection on Section 24.3.2.9
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