NXP Semiconductors MC9S12G User Manual

Electrical Characteristics
MC9S12G Family Reference Manual Rev.1.27
1216 NXP Semiconductors
A.7.2 NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Table A-38. NVM Timing Characteristics)
S12G192, S12GA192, S12G240, S12GA240
Num Command
f
NVMOP
cycle
f
NVMBUS
cycle
Symbol Min
1
Typ
2
Max
3
Lfmax
4
Unit
1
Erase Verify All Blocks
5,6
0 64361
t
RD1ALL
2.57 2.57 5.15 128.72 ms
2
Erase Verify Block (Pflash)
5
0 62128
t
RD1BLK_P
2.49 2.49 4.97 124.26 ms
3
Erase Verify Block (EEPROM)
6
02586
t
RD1BLK_D
0.1 0.1 0.21 5.17 ms
4 Erase Verify P-Flash Section 0 606
t
RD1SEC
0.02 02 0.05 1.21 ms
5 Read Once 0 516
t
RDONCE
20.64 20.64 20.64 516 s
6 Program P-Flash (4 Word) 164 3014
t
PGM_4
0.28 0.28 0.65 12.26 ms
7 Program Once 164 2960
t
PGMONCE
0.27 0.28 0.28 3.17 ms
8
Erase All Blocks
5,6
200126 65067
t
ERSALL
193.2 202.73 205.33 380.29 ms
9
Erase Flash Block (Pflash)
5
200120 62651
t
ERSBLK_P
193.1 202.63 205.13 375.45 ms
10
Erase Flash Block (EEPROM)
6
100060 2871
t
ERSBLK_D
95.41 100.17 100.29 130.82 ms
11 Erase P-Flash Sector 20015 962
t
ERSPG
19.1 20.05 20.09 26.94 ms
12 Unsecure Flash 200126 65145
t
UNSECU
193.2 202.73 205.34 380.45 ms
13 Verify Backdoor Access Key 0 549
t
VFYKEY
21.96 21.96 21.96 549 s
14 Set User Margin Level 0 426
t
MLOADU
17.04 17.04 17.04 426 s
15 Set Factory Margin Level 0 435
t
MLOADF
17.4 17.4 17.4 435 s
16 Erase Verify EEPROM Section 0 582
t
DRD1SEC
0.02 0.02 0.05 1.16 ms
17 Program EEPROM (1 Word) 68 1585
t
DPGM_1
0.13 0.13 0.32 6.43 ms
18 Program EEPROM (2 Word) 136 2532
t
DPGM_2
0.23 0.24 0.54 10.3 ms
19 Program EEPROM (3 Word) 204 3479
t
DPGM_3
0.33 0.34 0.76 14.17 ms
20 Program EEPROM (4 Word) 272 4426
t
DPGM_4
0.44 0.45 0.98 18.04 ms
21 Erase EEPROM Sector 5015 777
t
DERSPG
4.81 5.05 20.59 38.28 ms
1
Minimum times are based on maximum f
NVMOP
and maximum f
NVMBUS
2
Typical times are based on typical f
NVMOP
and typical f
NVMBUS
3
Maximum times are based on typical f
NVMOP
and typical f
NVMBUS
plus aging
4
Lowest-frequency max times are based on minimum f
NVMOP
and minimum f
NVMBUS
plus aging
5
Affected by Pflash size
6
Affected by EEPROM size

NXP Semiconductors MC9S12G Specifications

General

Brand	NXP Semiconductors
Model	MC9S12G
Category	Microcontrollers
Language	English