NXP Semiconductors MC9S12G User Manual

Electrical Characteristics
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 1181
A.1.7 Operating Conditions
This section describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Please refer to the temperature rating of the device (C, V, M, W) with
regards to the ambient temperature T
A
and the junction temperature T
J
. For
power dissipation calculations refer to Section A.1.8, “Power Dissipation
and Thermal Characteristics”.
Table A-2. ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human Body
Series Resistance R1 1500 
Storage Capacitance C 100 pF
Number of Pulse per pin
positive
negative
-
-
3
3
Table A-3. ESD and Latch-Up Protection Characteristics
Num C Rating Symbol Min Max Unit
1C
Human Body Model (HBM) V
HBM
2000 - V
2C
Charge Device Model (CDM) V
CDM
500 - V
3C
Charge Device Model (CDM) (Corner Pins) V
CDM
750 - V
4C
Latch-up Current at 125C
positive
negative
I
LAT
+100
-100
-mA
5C
Latch-up Current at 27C
positive
negative
I
LAT
+200
-200
-mA
Table A-4. Operating Conditions
Rating Symbol Min Typ Max Unit
I/O, regulator and analog supply voltage V
DD35
3.13 5 5.5 V
Oscillator f
osc
4—16MHz
Bus frequency f
bus
0.5 — 25 MHz
Temperature Option C
Operating ambient temperature range
1
Operating junction temperature range
T
A
T
J
–40
–40
27
—
85
105
C

NXP Semiconductors MC9S12G Specifications

General

Brand	NXP Semiconductors
Model	MC9S12G
Category	Microcontrollers
Language	English