NXP Semiconductors MC9S12G - Allowed Simultaneous P-Flash and EEPROM Operations

48 KByte Flash Module (S12FTMRG48K1V1)
MC9S12G Family Reference Manual Rev.1.27
898 NXP Semiconductors
26.4.5 Allowed Simultaneous P-Flash and EEPROM Operations
Only the operations marked ‘OK’ in Table 26-30 are permitted to be run simultaneously on the Program
Flash and EEPROM blocks. Some operations cannot be executed simultaneously because certain
hardware resources are shared by the two memories. The priority has been placed on permitting Program
Flash reads while program and erase operations execute on the EEPROM, providing read (P-Flash) while
write (EEPROM) functionality.
0x08 Erase All Blocks
Erase all EEPROM (and P-Flash) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN
bits in the FPROT register and the DPOPEN bit in the EEPROT register are set prior to
launching the command.
0x09 Erase Flash Block
Erase a EEPROM (or P-Flash) block.
An erase of the full EEPROM block is only possible when DPOPEN bit in the EEPROT
register is set prior to launching the command.
0x0B Unsecure Flash
Supports a method of releasing MCU security by erasing all EEPROM (and P-Flash)
blocks and verifying that all EEPROM (and P-Flash) blocks are erased.
0x0D
Set User Margin
Level
Specifies a user margin read level for the EEPROM block.
0x0E
Set Field Margin
Level
Specifies a field margin read level for the EEPROM block (special modes only).
0x10
Erase Verify
EEPROM Section
Verify that a given number of words starting at the address provided are erased.
0x11
Program
EEPROM
Program up to four words in the EEPROM block.
0x12
Erase EEPROM
Sector
Erase all bytes in a sector of the EEPROM block.
Table 26-30. Allowed P-Flash and EEPROM Simultaneous Operations
EEPROM
Program Flash Read
Margin
Read
1
Program
Sector
Erase
Mass
Erase
2
Read OK OK OK
Margin Read
1
1
A ‘Margin Read’ is any read after executing the margin setting commands
‘Set User Margin Level’ or ‘Set Field Margin Level’ with anything but the
‘normal’ level specified. See the Note on margin settings in Section 26.4.6.12
and Section 26.4.6.13.
Program
Sector Erase
Mass Erase
2
2
The ‘Mass Erase’ operations are commands ‘Erase All Blocks’ and ‘Erase
Flash Block’
OK
Table 26-29. EEPROM Commands
FCMD Command Function on EEPROM Memory