NXP Semiconductors MC9S12G - A.8.2 Electrical Characteristics for the PLL

Electrical Characteristics
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 1219
A.8.2 Electrical Characteristics for the PLL
A.9 Electrical Characteristics for the IRC1M
Table A-40. PLL Characteristics
Conditions are shown in Table A-15 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
1 D VCO frequency during system reset f
VCORST
825MHz
2 C VCO locking range f
VCO
32 50 MHz
3 C Reference Clock f
REF
1MHz
4 D Lock Detection 
Lock
|0 1.5%
1
1
% deviation from target frequency
5 D Un-Lock Detection 
unl
|0.5 2.5%
1
6 C Time to lock t
lock
150 +
256/f
REF
s
7 C Jitter fit parameter 1
2
IRC as reference clock source
2
f
REF
= 1MHz (IRC), f
BUS
= 25MHz equivalent f
PLL
= 50MHz, CPMUSYNR=0x58, CPMUREFDIV=0x00, CPMUPOSTDIV=0x00
j
irc
1.4 %
8 C Jitter fit parameter 1
3
XOSCLCP as reference clock source
3
f
REF
= 4MHz (XOSCLCP), f
BUS
= 24MHz equivalent f
PLL
= 48MHz, CPMUSYNR=0x05, CPMUREFDIV=0x40,
CPMUPOSTDIV=0x00
j
ext
1.0 %
Table A-41. IRC1M Characteristics (Junction Temperature From –40C To +150C, all packages)
Conditions are: Temperature option C, V, or M (see Table A-4)
Num C Rating Symbol Min Typ Max Unit
1 P Internal Reference Frequency, factory trimmed f
IRC1M_TRIM
0.987 1 1.013 MHz
Table A-42. IRC1M Characteristics (Junction Temperature From –40C To +150C, KGD)
Conditions are: Temperature option C, V, or M (see Table A-4)
Num C Rating Symbol Min Typ Max Unit
1 P Internal Reference Frequency, factory trimmed f
IRC1M_TRIM
0.980 1 1.020 MHz