16 KByte Flash Module (S12FTMRG16K1V1)
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 767
• Fast sector erase and phrase program operation
• Ability to read the P-Flash memory while programming a word in the EEPROM memory
• Flexible protection scheme to prevent accidental program or erase of P-Flash memory
24.1.2.2 EEPROM Features
• 512 bytes of EEPROM memory composed of one 512 byte Flash block divided into 128 sectors of
4 bytes
• Single bit fault correction and double bit fault detection within a word during read operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and word program operation
• Protection scheme to prevent accidental program or erase of EEPROM memory
• Ability to program up to four words in a burst sequence
24.1.2.3 Other Flash Module Features
• No external high-voltage power supply required for Flash memory program and erase operations
• Interrupt generation on Flash command completion and Flash error detection
• Security mechanism to prevent unauthorized access to the Flash memory
24.1.3 Block Diagram
The block diagram of the Flash module is shown in Figure 24-1.
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