192 KByte Flash Module (S12FTMRG192K2V1)
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 1117
CAUTION
Field margin levels must only be used during verify of the initial factory
programming.
NOTE
Field margin levels can be used to check that Flash memory contents have
adequate margin for data retention at the normal level setting. If unexpected
results are encountered when checking Flash memory contents at field
margin levels, the Flash memory contents should be erased and
reprogrammed.
30.4.6.14 Erase Verify EEPROM Section Command
The Erase Verify EEPROM Section command will verify that a section of code in the EEPROM is erased.
The Erase Verify EEPROM Section command defines the starting point of the data to be verified and the
number of words.
Upon clearing CCIF to launch the Erase Verify EEPROM Section command, the Memory Controller will
verify the selected section of EEPROM memory is erased. The CCIF flag will set after the Erase Verify
EEPROM Section operation has completed. If the section is not erased, it means blank check failed, both
MGSTAT bits will be set.
Table 30-60. Erase Verify EEPROM Section Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x10
Global address [17:16] to
identify the EEPROM
block
001 Global address [15:0] of the first word to be verified
010 Number of words to be verified
Table 30-61. Erase Verify EEPROM Section Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 30-27)
Set if an invalid global address [17:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the requested section breaches the end of the EEPROM block
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read or if blank check failed.
MGSTAT0
Set if any non-correctable errors have been encountered during the read or if
blank check failed.
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