48 KByte Flash Module (S12FTMRG48K1V1)
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 911
26.4.6.15 Program EEPROM Command
The Program EEPROM operation programs one to four previously erased words in the EEPROM block.
The Program EEPROM operation will confirm that the targeted location(s) were successfully programmed
upon completion.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
Upon clearing CCIF to launch the Program EEPROM command, the user-supplied words will be
transferred to the Memory Controller and be programmed if the area is unprotected. The CCOBIX index
value at Program EEPROM command launch determines how many words will be programmed in the
EEPROM block. The CCIF flag is set when the operation has completed.
Table 26-61. Erase Verify EEPROM Section Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 26-27)
Set if an invalid global address [17:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the requested section breaches the end of the EEPROM block
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read or if blank check failed.
MGSTAT0
Set if any non-correctable errors have been encountered during the read or if
blank check failed.
Table 26-62. Program EEPROM Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x11
Global address [17:16] to
identify the EEPROM block
001 Global address [15:0] of word to be programmed
010 Word 0 program value
011 Word 1 program value, if desired
100 Word 2 program value, if desired
101 Word 3 program value, if desired
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