NXP Semiconductors MC9S12G - Page 1011

96 KByte Flash Module (S12FTMRG96K1V1)
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 1013
CAUTION
Field margin levels must only be used during verify of the initial factory
programming.
NOTE
Field margin levels can be used to check that Flash memory contents have
adequate margin for data retention at the normal level setting. If unexpected
results are encountered when checking Flash memory contents at field
margin levels, the Flash memory contents should be erased and
reprogrammed.
28.4.6.14 Erase Verify EEPROM Section Command
The Erase Verify EEPROM Section command will verify that a section of code in the EEPROM is erased.
The Erase Verify EEPROM Section command defines the starting point of the data to be verified and the
number of words.
Upon clearing CCIF to launch the Erase Verify EEPROM Section command, the Memory Controller will
verify the selected section of EEPROM memory is erased. The CCIF flag will set after the Erase Verify
EEPROM Section operation has completed. If the section is not erased, it means blank check failed, both
MGSTAT bits will be set.
Table 28-59. Set Field Margin Level Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 001 at command launch
Set if command not available in current mode (see Table 28-27)
Set if an invalid FlashBlockSelectionCode[1:0] is supplied (See Table 28-34 )
1
1
As defined by the memory map for FTMRG96K1.
Set if an invalid margin level setting is supplied
FPVIOL None
MGSTAT1 None
MGSTAT0 None
Table 28-60. Erase Verify EEPROM Section Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x10
Global address [17:16] to
identify the EEPROM
block
001 Global address [15:0] of the first word to be verified
010 Number of words to be verified