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NXP Semiconductors LPC11U3x User Manual

NXP Semiconductors LPC11U3x
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UM10462 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2016. All rights reserved.
User manual Rev. 5.5 — 21 December 2016 404 of 523
NXP Semiconductors
UM10462
Chapter 20: LPC11U3x/2x/1x Flash programming firmware
20.13.7 Copy RAM to flash <Flash address> <RAM address> <no of bytes>
When writing to the flash, the following limitations apply:
1. The smallest amount of data that can be written to flash by the copy RAM to flash
command is 256 byte (equal to one page).
2. One page consists of 16 flash words (lines), and the smallest amount that can be
modified per flash write is one flash word (one line). This limitation is due to the
application of ECC to the flash write operation, see Section 20.6
.
3. To avoid write disturbance (a mechanism intrinsic to flash memories), an erase should
be performed after following 16 consecutive writes inside the same page. Note that
the erase operation then erases the entire sector.
Remark: Once a page has been written to 16 times, it is still possible to write to other
pages within the same sector without performing a sector erase (assuming that those
pages have been erased previously).
Table 371. ISP Prepare sector(s) for write operation command
Command P
Input Start Sector Number
End Sector Number: Should be greater than or equal to start sector number.
Return Code CMD_SUCCESS |
BUSY |
INVALID_SECTOR |
PARAM_ERROR
Description This command must be executed before executing "Copy RAM to flash" or "Erase
Sector(s)" command. Successful execution of the "Copy RAM to flash" or "Erase
Sector(s)" command causes relevant sectors to be protected again. The boot
block can not be prepared by this command. To prepare a single sector use the
same "Start" and "End" sector numbers.
Example "P 0 0<CR><LF>" prepares the flash sector 0.

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NXP Semiconductors LPC11U3x Specifications

General IconGeneral
BrandNXP Semiconductors
ModelLPC11U3x
CategoryMicrocontrollers
LanguageEnglish

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