UM10462 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2016. All rights reserved.
User manual Rev. 5.5 — 21 December 2016 416 of 523
NXP Semiconductors
UM10462
Chapter 20: LPC11U3x/2x/1x Flash programming firmware
20.14.10 Erase page
Remark: See Table 357 for list of parts that implement this command.
20.14.11 Write EEPROM
20.14.12 Read EEPROM
Table 392. IAP Erase page command
Command Erase page
Input Command code: 59 (decimal)
Param0: Start page number.
Param1: End page number (should be greater than or equal to start page)
Param2: System Clock Frequency (CCLK) in kHz.
Status code CMD_SUCCESS |
BUSY |
SECTOR_NOT_PREPARED_FOR_WRITE_OPERATION |
INVALID_SECTOR
Result None
Description This command is used to erase a page or multiple pages of on-chip flash memory.
To erase a single page use the same "start" and "end" page numbers. See
Table 3 57
for list of parts that implement this command.
Table 393. IAP Write EEPROM command
Command Compare
Input Command code: 61 (decimal)
Param0: EEPROM address.
Param1: RAM address.
Param2: Number of bytes to be written.
Param3: System Clock Frequency (CCLK) in kHz. The minimum CCLK frequency
supported is CCLK = 200 kHz.
Status code CMD_SUCCESS | SRC_ADDR_NOT_MAPPED | DST_ADDR_NOT_MAPPED
Result None
Description Data is copied from the RAM address to the EEPROM address.
Remark: The top 64 bytes of the 4 kB EEPROM memory are reserved and
cannot be written to. The entire EEPROM is writable for smaller EEPROM sizes.
Table 394. IAP Read EEPROM command
Command Compare
Input Command code: 62 (decimal)
Param0: EEPROM address.
Param1: RAM address.
Param2: Number of bytes to be read.
Param3: System Clock Frequency (CCLK) in kHz. The minimum CCLK frequency
supported is CCLK = 200 kHz.
Status code CMD_SUCCESS | SRC_ADDR_NOT_MAPPED | DST_ADDR_NOT_MAPPED
Result None
Description Data is copied from the EEPROM address to the RAM address.
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