4200-900-01 Rev. K / February 2017 Return to Section Topics 3-5
Model 4200-SCS User’s Manual Section 3: Common Device Characterization Tests
4- terminal n-MOSFET tests
By default, the following tests use three source-measure units (SMUs) and one
ground unit (GNDU). It is also possible to use four SMUs, one for each device-
under test (DUT) terminal (see Figure 3-2). For more information about the vds-id
Definition tab refer to the Test definition, page 1-41.
Figure 3-2
4-terminal n-MOSFET tests
Description of 4-terminal n-MOSFET tests:
vds-id:
This test generates a family of I-V curves on a 4-terminal n-MOSFET and plots
drain current versus drain voltage.
vtlin:
This test runs a typical linear curve fit to find the threshold voltage of a
4-terminal n-MOSFET and plots drain current versus gate voltage.
subvt:
This test runs an I-V sweep and calculates the sub-threshold voltage of a
4-terminal n-MOSFET and plots drain current versus gate voltage.
vgs-id:
This test runs an I-V sweep on the gate and calculates the threshold voltage using
the Max GM method.
Ig-vg:
This test runs a linear I-V sweep on the gate, plots gate voltage versus gate
current, and calculates the gate leakage current using formulator functions and a
linear line fit.
To Next Page
Loading...