Keithley 4200-SCS User Manual

3-130 Return to Section Topics 4200-900-01 Rev. K / February 2017
Section 3: Common Device Characterization Tests Model 4200-SCS User’s Manual
Figure 3-108
Flash-NAND project – Vt-MaxGm definition tab
Program-8 test – This test uses Segment ARB waveforms to program an 8-
terminal flash memory device.
Erase-8 test – This test uses Segment ARB
®
waveforms to erase an 8-terminal
flash memory device.
Fast-Program-Erase-8 test – This test uses Segment ARB waveforms to
program and erase an 8-terminal flash memory device.
Flash-NOR tests
The Flash-NOR project has tests similar to the Flash-NAND project, with
parameter defaults for NOR type floating gate DUTs.
Flash-switch tests
The Flash-Switch project has similar tests to the Flash-NAND, with parameter
defaults for using a switch matrix for more complex multi-DUT addressable test
structures (see Figure 3-84). Also, SMU and 4205-PG2 pulse channels are
connected to the matrix differently, eliminating the SMU+Pulse sharing of cables
to the DUT. Using the switch means that ConPin tests (see Figure 3-109) are
added after the Open-VPU-Relay tests in the direct-connect versions Flash-
NAND (see Figure 3-101) and Flash-NOR.

Keithley 4200-SCS Specifications

General

Brand	Keithley
Model	4200-SCS
Category	Semiconductors
Language	English