3-8 Return to Section Topics 4200-900-01 Rev. K / February 2017
Section 3: Common Device Characterization Tests Model 4200-SCS User’s Manual
Diode tests
By default, these tests use two SMUs. It is also possible to use one SMU on the
anode and the GNDU on the cathode (see Figure 3-5).
Figure 3-5
Diode tests
Description of diode tests:
These tests serve as good examples on how to configure tests in the definition
tab, how to use Formulator functions to perform common mathematical
calculations and return them to the data sheet, and how to configure the graph to
plot the data in a variety of ways.
All test parameters in the default project were written for standard discrete parts
but can be easily modified for use with other discrete devices or devices on a
semiconductor wafer.
To see exactly what discrete DUTs these tests were performed on, see the
Default project notes by clicking on the default project tree node and then
selecting the Project Notes tab (see Figure 3-6). Data sheets for the test DUTs
used with the default project can be found on the Model 4200 Complete
Reference webpage on the data sheets page.
vfd:
This test runs a linear forward I-V sweep through the anode, uses the formulator to calculate the
exponential line fits, and plots anode current versus anode voltage.
vrd:
This test runs a linear reverse I-V sweep through the anode, uses the formulator to calculate the
exponential line fits, and plots anode current versus anode voltage.
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