4200-900-01 Rev. K / February 2017 Return to Section Topics 3-145
Model 4200-SCS User’s Manual Section 3: Common Device Characterization Tests
Erase test – This test uses Segment ARB
®
waveforms to program a flash
memory device. The default Definition tab for this test is shown in Figure 3-120.
Figure 3-120
FlashEndurance-NAND project – Erase Definition tab
SetupDC-Erase test – This test isolates the VPU outputs from the DUT. It does
this by opening the HEOR for each VPU channel. Disconnecting the VPU
channels allows for accurate DC results.
Vt-MaxGm-Erase test – This test is used to perform a DC voltage sweep on the
gate of the DUT and measure the drain current at each sweep step. SMU3 is
configured to perform a 101 point sweep from 0 to 5 V in 50 mV steps. SMU1 is
configured to DC bias the drain at 0.5 V and measure current at each step of the
sweep.
The Vt-MaxGm tests may be replaced with another Vt or DC test. Or, additional
DC tests may be added after this test.
FlashEndurance-NOR tests
The FlashEndurance-NOR project has tests similar to the FlashEndurance-NAND
project, with defaults for NOR type floating gate DUTs.
FlashEndurance-switch tests
The FlashEndurance-switch project, Figure 3-121, has similar tests to the
FlashEndurance-NAND, with defaults for using a switch matrix for more complex
multi-DUT addressable test structures (see Figure 3-97). Also note the additional
test, Open-VPU-Relay, added prior to Conpin-DC tests. This step ensures that
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