RM0008 Flexible static memory controller (FSMC)
Doc ID 13902 Rev 12 495/1096
21.5.1 External memory interface signals
Table 104, Table 105 and Table 106 list the signals that are typically used to interface NOR
Flash, SRAM and PSRAM.
Note: Prefix “N”. specifies the associated signal as active low.
NOR Flash, nonmultiplexed I/Os
NOR Flash memories are addressed in 16-bit words. The maximum capacity is 512 Mbit (26
address lines).
NOR Flash, multiplexed I/Os
Bust turn
Duration of the bus
turnaround phase
Asynchronous and
synchronous read
AHB clock cycle
(HCLK)
116
Clock divide
ratio
Number of AHB clock cycles
(HCLK) to build one memory
clock cycle (CLK)
Synchronous
AHB clock cycle
(HCLK)
116
Data latency
Number of clock cycles to
issue to the memory before
the first data of the burst
Synchronous
Memory clock
cycle (CLK)
217
Table 103. Programmable NOR/PSRAM access parameters (continued)
Parameter Function Access mode Unit Min. Max.
Table 104. Nonmuxed I/O NOR Flash
FSMC signal name I/O Function
CLK O Clock (for synchronous burst)
A[25:0] O Address bus
D[15:0] I/O Bidirectional data bus
NE[x] O Chip select, x = 1..4
NOE O Output enable
NWE O Write enable
NL(=NADV) O
Latch enable (this signal is called address
valid, NADV, by some NOR Flash devices)
NWAIT I NOR Flash wait input signal to the FSMC
Table 105. Muxed I/O NOR Flash
FSMC signal name I/O Function
CLK O Clock (for synchronous burst)
A[25:16] O Address bus
AD[15:0] I/O 16-bit multiplexed, bidirectional address/data bus
NE[x] O Chip select, x = 1..4
NOE O Output enable