MPC5604B/C Microcontroller Reference Manual, Rev. 8
682 Freescale Semiconductor
PEG Program/Erase Good
The PEG bit indicates the completion status of the last flash memory program or erase
sequence for which high voltage operations were initiated. The value of PEG is updated
automatically during the program and erase high voltage operations.
Aborting a program/erase high voltage operation will cause PEG to be cleared to ‘0’,
indicating the sequence failed.
PEG is set to ‘1’ when the flash memory module is reset, unless a flash memory initialization
error has been detected.
The value of PEG is valid only when PGM = 1 and/or ERS = 1 and after DONE transitions
from 0 to 1 due to an abort or the completion of a program/erase operation. PEG is valid until
PGM/ERS makes a 1 to 0 transition or EHV makes a 0 to 1 transition.
The value in PEG is not valid after a 0 to 1 transition of DONE caused by ESUS being set to
logic 1.
If program or erase are attempted on blocks that are locked, the response will be PEG = 1,
indicating that the operation was successful, and the content of the block were properly
protected from the program or erase operation.
If a Program operation tries to program at ‘1’ bits that are at ‘0’, the program operation is
correctly executed on the new bits to be programmed at ‘0’, but PEG is cleared, indicating
that the requested operation has failed.
In Array Integrity Check or Margin Read PEG is set to 1 when the operation is completed,
regardless the occurrence of any error. The presence of errors can be detected only
comparing checksum value stored in UMIRS0-1.
Aborting an Array Integrity Check or a Margin Read operation will cause PEG to be cleared
to 0, indicating the sequence failed.
0: Program, Erase operation failed or Program, Erase, Array Integrity Check or Maring Mode
aborted.
1: Program or Erase operation succesful or Array Integrity Check or Maring Mode
completed.
PGM ProGraM
PGM is used to set up the flash memory module for a Program operation.
A 0 to 1 transition of PGM initiates a Program sequence.
A 1 to 0 transition of PGM ends the Program sequence.
PGM can be set only under User Mode Read (ERS is low and DFLASH_UT0[AIE] is low).
PGM can be cleared by the user only when EHV is low and DONE is high.
PGM is cleared on reset.
0: Flash memory is not executing a Program sequence.
1: Flash memory is executing a Program sequence.
PSUS PSUS: Program SUSpend
Write this bit has no effect, but the written data can be read back.
ERS ERaSe
ERS is used to set up the flash memory module for an erase operation.
A 0 to 1 transition of ERS initiates an erase sequence.
A 1 to 0 transition of ERS ends the erase sequence.
ERS can be set only under User Mode Read (PGM is low and DFLASH_UT0[AIE] is low).
ERS can be cleared by the user only when ESUS and EHV are low and DONE is high.
ERS is cleared on reset.
0: Flash memory is not executing an erase sequence.
1: Flash memory is executing an erase sequence.
Table 27-34. DFLASH_MCR field descriptions (continued)
Field Description
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