MPC5604B/C Microcontroller Reference Manual, Rev. 8
Freescale Semiconductor 651
RWE Read-while-Write event Error
RWE provides information on previous reads when a Modify operation is on going. If a RWW
Error occurs, the RWE bit is set to ‘1’. Read-While-Write Error means that a read access to
the flash memory Matrix has occurred while the FPEC was performing a program or erase
operation or an Array Integrity Check.
This bit must then be cleared, or a reset must occur before this bit will return to a 0 state.
This bit may not be set to ‘1’ by the user.
If RWE is not set, or remains 0, this indicates that all previous RWW reads (from the last
reset, or clearing of RWE) were correct.
0: Reads are occurring normally.
1: A RWW Error occurred during a previous read.
PEAS Program/Erase Access Space
PEAS is used to indicate which space is valid for program and erase operations: main array
space or shadow/test space.
PEAS = 0 indicates that the main address space is active for all flash memory module
program and erase operations.
PEAS = 1 indicates that the test or shadow address space is active for program and erase.
The value in PEAS is captured and held with the first interlock write done for Modify
operations. The value of PEAS is retained between sampling events (that is, subsequent first
interlock writes).
0: Shadow/Test address space is disabled for program/erase and main address space
enabled.
1: Shadow/Test address space is enabled for program/erase and main address space
disabled.
DONE modify operation DONE
DONE indicates if the flash memory module is performing a high voltage operation.
DONE is set to 1 on termination of the flash memory module reset.
DONE is cleared to 0 just after a 0 to 1 transition of EHV, which initiates a high voltage
operation, or after resuming a suspended operation.
DONE is set to 1 at the end of program and erase high voltage sequences.
DONE is set to 1 (within t
PAB T or tEABT, equal to P/E Abort Latency) after a 1 to 0 transition
of EHV, which aborts a high voltage Program/Erase operation.
DONE is set to 1 (within t
ESUS, time equals to Erase Suspend Latency) after a 0 to 1
transition of ESUS, which suspends an erase operation.
0: Flash memory is executing a high voltage operation.
1: Flash memory is not executing a high voltage operation.
Table 27-9. CFLASH_MCR field descriptions (continued)
Field Description
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