MPC5604B/C Microcontroller Reference Manual, Rev. 8
Freescale Semiconductor 653
ESUS Erase SUSpend
ESUS is used to indicate that the flash memory module is in Erase Suspend or in the
process of entering a Suspend state. The flash memory module is in Erase Suspend when
ESUS = 1 and DONE = 1.
ESUS can be set high only when ERS and EHV are high and PGM is low.
A 0 to 1 transition of ESUS starts the sequence which sets DONE and places the flash
memory in Erase Suspend. The flash memory module enters Suspend within t
ESUS
of this
transition.
ESUS can be cleared only when DONE and EHV are high and PGM is low.
A 1 to 0 transition of ESUS with EHV = 1 starts the sequence which clears DONE and returns
the module to Erase.
The flash memory module cannot exit Erase Suspend and clear DONE while EHV is low.
ESUS is cleared on reset.
0: Erase sequence is not suspended.
1: Erase sequence is suspended.
EHV Enable High Voltage
The EHV bit enables the flash memory module for a high voltage program/erase operation.
EHV is cleared on reset.
EHV must be set after an interlock write to start a program/erase sequence. EHV may be set
under one of the following conditions:
Erase (ERS = 1, ESUS = 0, UT0[AIE] = 0)
Program (ERS = 0, ESUS = 0, PGM = 1, UT0[AIE] = 0)
In normal operation, a 1 to 0 transition of EHV with DONE high and ESUS low terminates
the current program/erase high voltage operation.
When an operation is aborted, there is a 1 to 0 transition of EHV with DONE low and the
eventual Suspend bit low. An abort causes the value of PEG to be cleared, indicating a failing
program/erase; address locations being operated on by the aborted operation contain
indeterminate data after an abort. A suspended operation cannot be aborted.
Aborting a high voltage operation will leave the flash memory module addresses in an
indeterminate data state. This may be recovered by executing an erase on the affected
blocks.
EHV may be written during Suspend. EHV must be high to exit Suspend. EHV may not be
written after ESUS is set and before DONE transitions high. EHV may not be cleared after
ESUS is cleared and before DONE transitions low.
0: Flash memory is not enabled to perform an high voltage operation.
1: Flash memory is enabled to perform an high voltage operation.
Table 27-10. Array space size
SIZE Array space size
000 128 KB
001 256 KB
010 512 KB
011 1024 KB
100 1536 KB
101 Reserved (2048 KB)
Table 27-9. CFLASH_MCR field descriptions (continued)
Field Description
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