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NXP Semiconductors KL25 Series - Freescale Semiconductor, Inc

NXP Semiconductors KL25 Series
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FTFA_FCCOBn field descriptions (continued)
Field Description
FCCOB Number Typical Command Parameter Contents [7:0]
A Data Byte 6
B Data Byte 7
FCCOB Endianness and Multi-Byte Access :
The FCCOB register group uses a big endian addressing convention. For all command parameter fields
larger than 1 byte, the most significant data resides in the lowest FCCOB register number. The FCCOB
register group may be read and written as individual bytes, aligned words (2 bytes) or aligned longwords
(4 bytes).
27.33.6 Program Flash Protection Registers (FTFA_FPROTn)
The FPROT registers define which logical program flash regions are protected from
program and erase operations. Protected flash regions cannot have their content changed;
that is, these regions cannot be programmed and cannot be erased by any flash command.
Unprotected regions can be changed by program and erase operations.
The four FPROT registers allow up to 32 protectable regions. Each bit protects a 1/32
region of the program flash memory except for memory configurations with less than 32
Kbytes of program flash where each assigned bit protects 1 Kbyte . For configurations
with 24 Kbytes of program flash memory or less, FPROT0 is not used. For configurations
with 16 Kbytes of program flash memory or less, FPROT1 is not used. For configurations
with 8 Kbytes of program flash memory, FPROT2 is not used. The bitfields are defined
in each register as follows:
Program flash protection register Program flash protection bits
FPROT0 PROT[31:24]
FPROT1 PROT[23:16]
FPROT2 PROT[15:8]
FPROT3 PROT[7:0]
During the reset sequence, the FPROT registers are loaded with the contents of the
program flash protection bytes in the Flash Configuration Field as indicated in the
following table.
Program flash protection register Flash Configuration Field offset address
FPROT0 0x000B
FPROT1 0x000A
Table continues on the next page...
Chapter 27 Flash Memory Module (FTFA)
KL25 Sub-Family Reference Manual, Rev. 3, September 2012
Freescale Semiconductor, Inc. 431

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