4: Multi-frequency capacitance-voltage unit Model 4200A-SCS Parameter Analyzer
4-54 4200A-901-01 Rev. C / February 2017
cvu-moscap project constants
The user-defined constants that are used for the application tests are summarized (in alphabetical
order) in the next tables.
Constant Default value Units Description
cm
DOPETYPE 1 none
1 = P-type, −1 = N-type
E
- Semiconductor energy gap
EOX 3.4e-013 F / cm
ε
OX
- Permittivity of oxide
ε
- Semiconductor permittivity
cm
N
- Intrinsic carrier concentration
WM 4.15 V
W
- Silicon electron affinity
moscap-cvsweep test
This test makes a capacitance measurement at each step of a user-configured linear voltage sweep.
Using the acquired C-V data, the Formulator calculates parameters, including oxide capacitance
(C
OX
), oxide thickness (T
OX
), flatband capacitance (C
FB
), flatband voltage (V
FB
), doping density,
depletion depth (DEPTHM), Debye length, threshold voltage (V
TH
), and the effective oxide charge
(Q
EFF
).
The series resistance (R
S
) is also calculated from the capacitance (in strong accumulation) and the
conductance. The corrected capacitance (C
ADJ
) is calculated by compensating for the series
resistance.
From the acquired data, a capacitance versus voltage graph is generated.
moscap-cvsweep Analyze sheet
The test data is displayed in the Analyze sheet:
• Cp_GB: Measured parallel capacitance.
• Gp_GB: Measured conductance.
• DCV_GB: Forced DC bias voltage.
• F_GB: Forced test frequency.
• Formulas: Formulator calculation results.
GB = gate-to-bulk.