D: Using a Model 82 C-V System Model 4200A-SCS Parameter Analyzer
D-66 4200A-901-01 Rev. C / February 2017
Articles and Papers
Feedback Charge Method
Mego, T.J., Improved Feedback Charge Method for Quasistatic CV Measurements in
Semiconductors, Rev. Sci. Instr. 57, 11 (1986).
Mego, T.J., "Improved Quasistatic CV Measurement Method for MOS," Solid State Technology, 29,
11, 519-21 (1986).
Markgraf, W., Baumann, M., Beyer, A., Arst, P., Rennau, M., Nutzung der statischen CU-Methode im
Ranen eines mikrorechnergesteuerten MOS-Messplatzes, Phys. d.
Halbleiteroberflaeche, 15, 73 (1984).
Q-V Static Method
Ziegler, K. and Klausmann, E., "Static Technique for Precise Measurements of Surface Potential and
Interface State Density in MOS Structures," Appl. Phys. Lett. 26, 400 (1975).
Kirov, K., Alexsandrova, S., and Minchev, C., "Error in Surface State Determination Caused by
Numerical Differentiation of Q-V Data," Solid State Electronics, 18, 341 (1978).
Q-C Method and Simultaneous High-low Frequency C-V
Nicollian, E.H. and Brews, J.R., "Instrumentation and Analog Implementation of the Q-C Method for
MOS Measurements," Solid State Electronics, 27, 953 (1984).
Boulin, D.M., Brews, J.R., and Nicollian, E.H., "Digital implementation of the Q-C Method for MOS
Measurements," Solid State Electronics, 27, 977 (1984).
Derbenwick, G.F., Automated C-V and |Y|-w Curves for MOS Device Analysis, Sandia Report
SAND80-1308 (1982).
Lubzens, D., Kolodny, A., and Shacham-Diamond, Y.J., "Automated Measurement and Analysis of
MIS Interfaces in Narrow-Bandgap Semiconductors," IEEE transactions on Electron Devices, ED-28,
5 (1981).
Ramp Method
Kuhn, M., "A Quasistatic Technique for MOS C-V and Surface State Measurements," Solid State
Electronics, 13, 873 (1970).
Castagne, R., "Détermination de la densité d’états lents d’une capacité métak-isolant semiconducteur
par l’étude de la charge sour une tension croissant line áirement," C.R. Acad. Sci 267, 866 (1968).
Kerr, D.R., "MIS Measurement Technique Utilizating Slow Voltage Ramps," Int. Conf. Properties and
Use of MIS Structures, Grenoble, France, 303 (1969).
Castagne, R., and Vapaille, A., "Description of the SiO2-Si Interface Properties by Means of Very Low
Frequency MOS Capacitance Measurements," Surface Science, 28, 157 (1971).
Kuhn, M. and Nicollian, E.H., "Nonequilibrium Effects in Quasi-static MOS Measurements," J.
Electrochem. Soc., 118, 373 (1971).
Lopez, A.D., "Using the Quasistatic Method for MOS Measurements", Rev. Sci. Instr. 44, 200 (1973).
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