6: Clarius Model 4200A-SCS Parameter Analyzer
6-148 4200A-901-01 Rev. C / February 2017
Configure subsite cycling
You can use the 4200A-SCS to stress test using subsite cycling (up to 128 times). A Clarius
evaluation consists of pre-stress tests at a subsite, followed by alternate cycles of stressing and
retesting. During the evaluation, Clarius can display intermediate numerical and graphical results and
status information. Clarius ends the evaluation when the devices degrade beyond specified exit
criteria (target degradation) or when the total stressing time reaches a specified maximum, whichever
comes first.
Subsite cycling allows you to repeatedly cycle through the subsite tests. Clarius can perform hot
carrier injection (HCI) tests, negative bias temperature instability (NBTI) tests, and similar wafer level
reliability (WLR) tests. The built-in software for stress testing is integrated with subsite cycling.
Data and graphs of the subsite cycles are available in the Analyze pane for the subsite.
The measured readings listed in the Analyze sheet are output values. An output value is a
measurement that is imported from an individual test in the subsite. See Output Values (on page
6-
176) for details.
The subsite cycling stress types are:
• Cycle Mode (on page 6-154): The subsite test is repeated a specified number of times. This
mode performs tests, but does not use device stressing.
• Stress/Measure Mode (on page 6-155): The Stress/Measure Mode integrates stressing with
subsite cycling for testing. The first cycle is stress-free. For each subsequent cycle, the devices in
the subsite are stressed with voltage or current for a specified time. After the stress period
expires, the tests in the subsite are run. Device stressing includes DC voltage stress, DC current
stress, and AC voltage stress. DC stress is applied by one or more SMUs. Devices can be
stressed individually, or they can be parallel-connected so that a single SMU can stress multiple
devices. The SMUs can also be used to measure the DC stress. AC stress is applied by pulse
cards. Each pulse card has two pulse output channels. Each channel can stress one device
terminal.
• Segment stress/measure mode (on page 6-170, on page 6-175): This mode is similar to the
standard Stress/Measure Mode, but is done using Segment Arb
®
pulse mode for stressing.
Stress is provided by a Segment Arb waveform generated by a pulse card. Each channel of the
pulse card can stress one device terminal. DC bias voltage and current limit for the device can be
provided by the SMUs in the system.
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