Keithley 4200A-SCS - Page 184

Model 4200A
-SCS Parameter Analyzer Reference Manual Section 4: Multi-frequency capacitance-
voltage unit
4200A-901-01 Rev. C / February 2017 4-91
Formula: INV_C
Formula name: INV_C (C)
Units: 1/F
Description: Inverse capacitance.
Formulator entry: INV_C = 1/(CP_AC)^2
Simplified equation:
Formula: DOPING
Formula name: DOPING (N)
Units: 1/cm
3
Description: Majority carrier concentration.
Formulator entry:
DOPING = ABS(2/Q/ES/AREA^2/DIFF(INV_C, DCV_AC))
Simplified equation:
Constants for the diode project
Constant Default Value Units Description
AREA 0.0001
cm
2
Gate area of device
ES
1.034e-12
F/cm
ε
S
- Semiconductor permittivity
cvsweep-diode test
This test measures the PN junction capacitance as a function of the DC bias voltage while the
junction is reverse biased. The test makes a capacitance measurement at each step of a user-
configured linear voltage sweep. From the acquired C-V data, the test uses the Formulator to
calculate parameters.
cvsweep-diode Analyze sheet
The test data is displayed in the Analyze sheet:
• Cp_AC: Measured parallel capacitance.
• Gp_AC: Measured conductance.
• DCV_AC: Forced DC bias voltage.
• F_AC: Forced test frequency.
• Formulas: Formulator calculation results.
AC = Anode to cathode