4: Multi-frequency capacitance-voltage unit Model 4200A-SCS Parameter Analyzer
4-76 4200A-901-01 Rev. C / February 2017
Formulas and constants
This project uses formulas and constants that are used by the cvu-moscap project. The formulas
and constants are summarized in cvu-moscap project formulas and constants (on page 4-47
).
The cv-vfb1 test also uses the following formula for gate area:
AREA_GATE = 2
Run the subsite
This semi-automatic test is executed from the mobileion subsite in the project. The test is run from
this subsite because the oxide thickness and flatband voltage extracted from the data in the tests is
sent to the subsite Analyze sheet after the tests are executed. The calculated value of the mobile ion
charge and concentration is shown in the Calc tab of the Analyze sheet for the subsite.
Before executing this subsite, you need to input the gate area of the device into the Constants tab of
the Formulator for the cv-vfb1, cv-vfb2, and cv-vfb3 test modules. Also, for the cv-vfb1 test,
you must also update the AREA_GATE formula in the Formulator. This formula is used in the
calculation of the mobile ion charge in the subsite Calc sheet.
This project must be run from the mobileion subsite level.
cv-vfb1 test
This test performs a C-V sweep on the MOS capacitor and extracts flatband capacitance, flatband
voltage, and oxide capacitance. The oxide capacitance and the flatband voltage are sent to the
Analyze sheet of the subsite. To view the values that are used in the mobile ion calculation, select the
Calc tab in the subsite Analyze sheet.
cv-vfb1 Analyze sheet
The test data is displayed in the Analyze sheet:
• Time: Timestamp for each measurement (if Report Timestamps is selected).
• Cp_GB: Measured parallel capacitance.
• Gp_GB: Measured conductance.
• DCV_GB: Forced DC bias voltage.
• F_GB: Forced test frequency.
• Formulas: Formulator calculation results.
If rows are highlighted in blue, a fault occurred. For details, see Measurement status (on page 6-191
).
GB = gate-to-bulk.
bias-pos test
This test applies a positive DC bias voltage to the MOS capacitor. The voltage continues to be
applied as the device under test (DUT) is heated in the next action, hotchuck.
No graph is generated for this test.
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