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ST ST10F276E - Page 544

ST ST10F276E
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Register set UM0404
544/564 DocID13284 Rev 2
IDPROG (F078h / 3Ch) ESFR Reset Value: 0040h
Note: 1. All identification words are read only registers.
The values written inside different Identification Register bits are valid only after the Flash
initialization phase is completed. When code execution is started from internal memory (pin
EA
held high during reset), the Flash has certainly completed its initialization, so the bits of
Identification Registers are immediately ready to be read out. On the contrary, when code
execution is started from external memory (pin EA
held low during reset), the Flash
initialization is not yet completed, so the bits of Identification Registers are not ready. The
user can poll bits 15 and 14 of IDMEM register: when both bits are read low, the Flash
initialization is complete, so all Identification Register bits are correct.
Before Flash initialization completion, the default setting of the different Identification
Registers are the following:
Bit Function
MEMSIZE
Internal Memory Size
Internal Memory size is 4 x (MEMSIZE) (in Kbyte)
0D0h for ST10F276 (832 Kbytes)
MEMTYP
Internal Memory Type
‘0h’: ROM-Less
‘1h’: (M) ROM memory
‘2h’: (S) Standard Flash memory
‘3h’: (H) High Performance Flash memory (ST10F276x)
‘4h...Fh’: reserved
1514131211109876543210
PROGVPP PROGVDD
RR
Bit Function
PROGVDD
Programming V
DD
Voltage
V
DD
voltage when programming EPROM or Flash devices is calculated using the
following formula: V
DD
= 20 x [PROGVDD] / 256 (volts) - 40h for ST10F276 (5V).
PROGVPP Programming V
PP
Voltage (no need of external V
PP
) - 00h
IDMANUF 0403h
IDCHIP 114xh (with x representing the silicon revision number)
IDMEM F0D0h
IDPROG 0040h

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