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ST STM32F446 Series User Manual

ST STM32F446 Series
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RM0390 Rev 4 309/1328
RM0390 Flexible memory controller (FMC)
324
Figure 55. Burst read SDRAM access
The FMC SDRAM controller features a Cacheable read FIFO (6 lines x 32 bits). It is used to
store data read in advance during the CAS latency period and the RPIPE delay following the
below formula. The RBURST bit must be set in the FMC_SDCR1 register to anticipate the
next read access.
Number for anticipated data = CAS latency + 1 + (RPIPE delay)/2
Examples:
CAS latency = 3, RPIPE delay = 0: Four data (not committed) are stored in the FIFO.
CAS latency = 3, RPIPE delay = 0: Five data (not committed) are stored in the FIFO.
The read FIFO features a 14-bit address tag to each line to identify its content: 11 bits for the
column address, 2 bits to select the internal bank and the active row, and 1 bit to select the
SDRAM device
When the end of the row is reached in advance during an AHB burst read, the data read in
advance (not committed) are not stored in the read FIFO. For single read access, data are
correctly stored in the FIFO.
Each time a read request occurs, the SDRAM controller checks:
If the address matches one of the address tags, data are directly read from the FIFO
and the corresponding address tag/ line content is cleared and the remaining data in
the FIFO are compacted to avoid empty lines.
Otherwise, a new read command is issued to the memory and the FIFO is updated with
new data. If the FIFO is full, the older data are lost.
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ST STM32F446 Series Specifications

General IconGeneral
BrandST
ModelSTM32F446 Series
CategoryMicrocontrollers
LanguageEnglish

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