RM0016 Flash program memory and data EEPROM
Doc ID 14587 Rev 8 35/449
4.3 Main Flash memory features
● STM8S and STM8A EEPROM is divided into two memory areas
– Up to 128 Kbytes of Flash program memory. The density differs according to the
device. Refer to Section 4.4: Memory organization for details
– Up to 2 Kbytes of data EEPROM including option bytes. Data EEPROM density
differs according to the device. Refer to Section 4.4: Memory organization for
details.
● Programming modes
– Byte programming and automatic fast byte programming (without erase operation)
– Word programming
– Block programming and fast block programming mode (without erase operation)
– Interrupt generation on end of program/erase operation and on illegal program
operation.
● Read-while-write capability (RWW). This feature is not available on all devices. Refer to
the datasheets for details
● In-application programming (IAP) and in-circuit programming (ICP) capabilities
● Protection features
– Memory readout protection (ROP)
– Program memory write protection with memory access security system (MASS
keys)
– Data memory write protection with memory access security system (MASS keys)
– Programmable write protected user boot code area (UBC).
● Memory state configurable to operating or power-down (I
DDQ
) in Halt and Active-halt
modes
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