ST STM32L0x3 User Manual

Flash program memory and data EEPROM (FLASH) RM0367
94/1043 RM0367 Rev 7
Timing tables
Table 17. NVM write/erase timings
Operation
Delay to latch the first
address/data
(in AHB clock pulses)
Delay to latch the next
address/data
(in AHB clock pulses)
Write to data EEPROM 18 -
Erase data EEPROM 17 -
Write Option bytes 18 -
Erase Option bytes 17 -
Program a single word in Flash
program memory
78 -
Program half-page in Flash
program memory
63 6
Erase a page in Flash program
memory
76 -
Table 18. NVM write/erase duration
Operation Parameters/Conditions Duration
Write to data EEPROM
Previous data = 0
FIX = 0
Tprog (3.2 ms)
Previous data /= 0
New data = 0
Size = word
FIX = 0
Tprog (3.2 ms)
Other situations 2 x Tprog (6.4 ms)
Erase data EEPROM - Tprog (3.2 ms)
Write Option bytes
Previous data = 0
FIX = 0
Tprog (3.2 ms)
Previous data /= 0
New data = 0
FIX = 0
Tprog (3.2 ms)
Other situations 2 x Tprog (6.4 ms)
Erase Option bytes - Tprog (3.2 ms)
Program a single word in
Flash program memory
- Tprog (3.2 ms)
Program a half-page in
Flash program memory
- Tprog (3.2 ms)
Erase a page in Flash
program memory
- Tprog (3.2 ms)
Mass erase - 2 x Tprog (6.4 ms) + Tglob (3.7 ms)

ST STM32L0x3 Specifications

General

Brand	ST
Model	STM32L0x3
Category	Microcontrollers
Language	English