Flash program memory and data EEPROM (FLASH) RM0367
66/1043 RM0367 Rev 7
3 Flash program memory and data EEPROM (FLASH)
3.1 Introduction
The non-volatile memory (NVM) is composed of:
• Up to 192 Kbytes of Flash program memory. This area is used to store the application
code.
• Up to 6 Kbytes of data EEPROM
• An information block:
– Up to 8 Kbytes of System memory
– Up to 8x4 bytes of user Option bytes
– Up to 96 bytes of factory Option bytes
3.2 NVM main features
The NVM interface features:
• Read interface organized by word, half-word or byte in every area
• Programming in the Flash memory performed by word or half-page
• Programming in the Option bytes area performed by word
• Programming in the data EEPROM performed by word, half-word or byte (granularity of
the data EEPROM is one word, erase/write endurance cycles are linked to one word
granularity)
• Erase operation performed by page (in Flash memory, data EEPROM and Option
bytes)
• Option byte Loader
• ECC (Error Correction Code): 6 bits stored for every word to recognize and correct just
one error
• Mass erase operation
• Read / Write protection
• PCROP protection
• Low-power mode
• Category 5 devices only:
– Dual-bank memory with read-while-write
– Dual-bank boot capability allowing to boot either from Bank 1 or Bank 2 at startup
– Bank swapping capability.
To Next Page
