Code examples RM0367
976/1043 RM0367 Rev 7
{
/* For robust implementation, add here time-out management */
}
if ((FLASH->PECR & FLASH_PECR_PELOCK) == 0) /* (2) */
{
if ((FLASH->PECR & FLASH_PECR_PRGLOCK) != 0) /* (3) */
{
FLASH->PRGKEYR = FLASH_PRGKEY1; /* (4) */
FLASH->PRGKEYR = FLASH_PRGKEY2;
}
}
A.3.4 Unlocking the option bytes area code example
/* (1) Wait till no operation is on going */
/* (2) Check that the PELOCK is unlocked */
/* (3) Check if the OPTLOCK is unlocked */
/* (4) Perform unlock sequence */
while ((FLASH->SR & FLASH_SR_BSY) != 0) /* (1) */
{
/* For robust implementation, add here time-out management */
}
if ((FLASH->PECR & FLASH_PECR_PELOCK) == 0) /* (2) */
{
if ((FLASH->PECR & FLASH_PECR_OPTLOCK) != 0) /* (2) */
{
FLASH->OPTKEYR = FLASH_OPTKEY1; /* (3) */
FLASH->OPTKEYR = FLASH_OPTKEY2;
}
}
A.3.5 Write to data EEPROM code example
*(uint8_t *)(DATA_E2_ADDR+i) = DATA_BYTE;
*(uint16_t *)(DATA_E2_ADDR+j) = DATA_16B_WORD;
*(uint32_t *)(DATA_E2_ADDR) = DATA_32B_WORD;
DATA_E2_ADDR is an aligned address in the data EEPROM area.
i can be any integer.
j must be an even integer.
A.3.6 Erase to data EEPROM code example
/* (1) Set the ERASE and DATA bits in the FLASH_PECR register
to enable page erasing */
/* (2) Write a 32-bit word value at the desired address
to start the erase sequence */
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