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NXP Semiconductors K22F series - Page 660

NXP Semiconductors K22F series
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29.4.11.1 Read 1s Block Command
The Read 1s Block command checks to see if an entire program flash block has been
erased to the specified margin level. The FCCOB flash address bits determine which
flash block is erase-verified.
Table 29-4. Read 1s Block Command FCCOB Requirements
FCCOB Number FCCOB Contents [7:0]
0 0x00 (RD1BLK)
1 Flash address [23:16] in the flash block to be verified
2 Flash address [15:8] in the flash block to be verified
3 Flash address [7:0]
1
in the flash block to be verified
4 Read-1 Margin Choice
1. Must be longword aligned (Flash address [1:0] = 00).
After clearing CCIF to launch the Read 1s Block command, the flash memory module
sets the read margin for 1s according to Table 29-5 and then reads all locations within the
selected program flash block.
Table 29-5. Margin Level Choices for Read 1s Block
Read Margin Choice Margin Level Description
0x00 Use the 'normal' read level for 1s
0x01 Apply the 'User' margin to the normal read-1 level
0x02 Apply the 'Factory' margin to the normal read-1 level
Table 29-6. Read 1s Block Command Error Handling
Error Condition Error Bit
Command not available in current mode/security FSTAT[ACCERR]
An invalid margin choice is specified FSTAT[ACCERR]
Program flash is selected and the address is out of program flash range FSTAT[ACCERR]
Flash address is not longword aligned FSTAT[ACCERR]
Read-1s fails FSTAT[MGSTAT0]
29.4.11.2 Read 1s Section Command
The Read 1s Section command checks if a section of program flash memory is erased to
the specified read margin level. The Read 1s Section command defines the starting
address and the number of phrases to be verified.
Functional Description
K22F Sub-Family Reference Manual, Rev. 4, 08/2016
660 NXP Semiconductors

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