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NXP Semiconductors MPC5566 - Features

NXP Semiconductors MPC5566
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Introduction
MPC5566 Microcontroller Reference Manual, Rev. 2
1-4 Freescale Semiconductor
1.3 Features
This section provides a high-level description of the features found in the MPC5566.
Operating parameters
Fully static operation, up to 144 MHz
–40 to 150 °C junction temperature
Low-power design
Less than 1.2 Watts power dissipation
Designed for dynamic power management of core and peripherals
Software-controlled clock gating of peripherals
Separate power supply for stand-by operation for portion of internal SRAM
Fabricated in 0.13 μm process
1.5 V internal logic
Input and output pins with 3.05.25 V range
35% or 65% V
DDEH
CMOS switch levels (with hysteresis)
Selectable hysteresis
Selectable slew rate control
External bus support 1.623.6 V operation and Nexus pins support 2.5–3.6 V operation
Selectable drive strength control
Unused pins configurable as GPIO
Designed with EMI reduction techniques
Frequency modulated phase-locked loop
On-chip bypass capacitance
Selectable slew rate and drive strength
High-performance e200z6 core processor
32-bit CPU built on Power Architecture technology
Freescale Variable Length Encoding (VLE) enhancements for code size footprint reduction
Thirty-two 64-bit general-purpose registers (GPRs)
Memory management unit (MMU) with 32-entry associative translation look-aside buffer
(TLB)
Branch processing unit
Fully pipelined load/store unit
32 KB unified cache with line locking
4 or 8-way set associative
Two 32-bit fetches per clock
8-entry store buffer
Way locking

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