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Infineon Technologies TC1796
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TC1796
System Units (Vol. 1 of 2)
Program Memory Unit
User’s Manual 7-8 V2.0, 2007-07
PMU, V2.0
Features of Data Flash
128 Kbyte on-chip data Flash memory, organized in two 64 Kbyte banks
Usable for data storage with EEPROM functionality
128 byte program interface
128 bytes are programmed into one DFLASH page by one step/command
64-bit read interface (no burst transfers)
Dynamic correction of single-bit errors during read access
Detection of double bit errors
Fixed sector architecture
Two 64 Kbyte banks/sectors
Each sector separately erasable
Configurable read protection (combined with write protection) for complete DFLASH
together with PFLASH read protection
Password mechanism to temporarily disable write and read protection
Erasing/programming of one bank possible while reading data from the other bank
Programming of one bank possible while erasing the other bank
On-chip generation of programming voltage
DFLASH is delivered in erased state (read all zeros)
JEDEC-standard based command sequences for DFLASH control
Write state machine controls programming and erase operations
Status and error reporting by status flags and interrupt
Margin check for detection of problematic DFLASH bits
The DFLASH contains two 64 Kbyte sectors, DS0 and DS1, which are identical with
banks DB0 and DB1. DFLASH pages are always 128-byte wide.
Table 7-2 DFLASH Bank and Page Definitions
Numbering Size Cached
Address Range
Non-Cached
Address Range
DFLASH Sectors (and Banks)
DS0 (= DB0) 64 Kbyte 8FE0 0000
H
- 8FE0 FFFF
H
AFE0 0000
H
- AFE0 FFFF
H
DS1 (= DB1) 64 Kbyte 8FE1 0000
H
- 8FE1 FFFF
H
AFE1 0000
H
- AFE1 FFFF
H
DFLASH Pages
DS0 DP0 128 byte 8FE0 0000
H
- 8FE0 007F
H
AFE0 0000
H
- AFE0 007F
H
DPn
1)
128 byte (8FE0 0000
H
+ OFF) -
(8FE0 0000
H
+ OFF + 7F
H
)
(with OFF = n × 80
H
)
(AFE0 0000
H
+ OFF) -
(AFE0 0000
H
+ OFF + 7F
H
)
(with OFF = n × 80
H
)
DP511 128 byte 8FE0 FF80
H
- 8FE0 FFFF
H
AFE0 FF80
H
- AFE0 FFFF
H

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