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Renesas RX Series User Manual

Renesas RX Series
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R01UH0823EJ0100 Rev.1.00 Page 1693 of 1823
Jul 31, 2019
RX23W Group 50. Flash Memory (FLASH)
Figure 50.15 Procedure to Issue the Block Erase Command for the E2 DataFlash
Set the beginning address
of the erasure block
in registers FSARH and FSARL
Yes
FCR register = 84h
FCR register = 00h
FSTATR1.FRDY flag = 1?
End in E2 DataFlash
P/E mode
No
FSTATR1.FRDY flag = 0?
Yes
No
Continue E2 DataFlash
erasure?
Yes
No
Yes
No
Set the last address of the erasure
block in registers FEARH and FEARL
FSTATR0.ILGLERR flag = 1 or
FSTATR0.ERERR flag = 1?
FRESETR.FRESET bit = 1
FRESETR.FRESET bit = 0
Sequencer
initialization
FASR.EXS bit = 0
Start in E2 DataFlash
P/E mode

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Renesas RX Series Specifications

General IconGeneral
CoreRXv1, RXv2, RXv3
Flash MemoryUp to 8 MB
RAMUp to 1 MB
Operating Voltage1.62V to 5.5V
Operating Temperature-40°C to +85°C or +105°C
PackageBGA, LQFP
ADC Resolution12-bit
DAC Resolution12-bit
Communication InterfacesSCI, SPI, I2C, USB, Ethernet, CAN
Architecture32-bit
Security FeaturesMemory Protection Unit (MPU)

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