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Renesas RX Series User Manual

Renesas RX Series
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R01UH0823EJ0100 Rev.1.00 Page 1662 of 1823
Jul 31, 2019
RX23W Group 50. Flash Memory (FLASH)
50.4 Register Descriptions
50.4.1 E2 DataFlash Control Register (DFLCTL)
Note 1. Start-up area information program and access window information program
The DFLCTL register is used to enable or disable access (read, program, and erase) to the E2 DataFlash and access
(start-up area information program, and access window information program) to the extra area in P/E mode.
When reading, programming, and erasing the E2 DataFlash, set the DFLCTL.DFLEN bit to 1 and wait for the E2
DataFlash STOP recovery time (tDSTOP) to elapse before reading the E2 DataFlash and entering E2 DataFlash P/E
mode. Do not read the E2 DataFlash or enter E2 DataFlash P/E mode until tDSTOP has elapsed.
Refer to
section 50.7.1, Sequencer Modes for details on E2 DataFlash P/E mode. Refer to section 51, Electrical
Characteristics
for E2 DataFlash STOP recovery time (tDSTOP).
Address(es): FLASH.DFLCTL 007F C090h
b7 b6 b5 b4 b3 b2 b1 b0
———————DFLEN
Value after reset:
00000000
Bit Symbol Bit Name Description R/W
b0 DFLEN E2 DataFlash Access
Enable
0: Access to E2 DataFlash and access to the extra area in P/E mode*
1
disabled
1: Access to E2 DataFlash and access to the extra area in P/E mode*
1
enabled
R/W
b7 to b1 Reserved These bits are read as 0. The write value should be 0. R/W

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Renesas RX Series Specifications

General IconGeneral
CoreRXv1, RXv2, RXv3
Flash MemoryUp to 8 MB
RAMUp to 1 MB
Operating Voltage1.62V to 5.5V
Operating Temperature-40°C to +85°C or +105°C
PackageBGA, LQFP
ADC Resolution12-bit
DAC Resolution12-bit
Communication InterfacesSCI, SPI, I2C, USB, Ethernet, CAN
Architecture32-bit
Security FeaturesMemory Protection Unit (MPU)

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