R01UH0823EJ0100 Rev.1.00 Page 1812 of 1823
Jul 31, 2019
RX23W Group 51. Electrical Characteristics
51.14 E2 DataFlash Characteristics (Flash Memory for Data Storage)
Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1000 times for different
addresses in a 1-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. Characteristic when the flash memory programmer is used and the self-programming library is provided from Renesas
Electronics.
Note 3. These results are obtained from reliability testing.
Note: The time until each operation of the flash memory is started after instructions are executed by software is not included.
Note: The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: The frequency accuracy of FCLK must be within ±3.5%.
Note: The time until each operation of the flash memory is started after instructions are executed by software is not included.
Note: The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note: The frequency accuracy of FCLK must be within ±3.5%.
Table 51.58 E2 DataFlash Characteristics (1)
Item Symbol Min. Typ. Max. Unit Test Conditions
Reprogramming/erasure cycle*
1
N
DPEC
100000 1000000 — Times
Data hold time After 10000 times of N
DPEC
t
DDRP
20*
2,
*
3
— — Year T
a
= +85°C
After 100000 times of N
DPEC
5*
2,
*
3
— — Year
After 1000000 times of N
DPEC
—1*
2,
*
3
— Year T
a
= +25°C
Table 51.59 E2 DataFlash Characteristics (2): high-speed operating mode
Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +85°C
Item Symbol
FCLK = 1 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time 1 byte t
DP1
— 95.0 797 — 40.8 376 μs
Erasure time 1 Kbyte t
DE1K
— 19.5 498 — 6.2 230 ms
8 Kbyte t
DE8K
— 119.8 2556 — 12.9 368 ms
Blank check time 1 byte t
DBC1
— — 55.00 — — 16.1 μs
1 Kbyte t
DBC1K
— — 0.72 — — 0.50 ms
Erase operation forced stop time t
DSED
— — 16.0 — — 10.7 μs
DataFlash STOP recovery time t
DSTOP
5.0 — — 5.0 — — μs
Table 51.60 E2 DataFlash Characteristics (3): middle-speed operating mode
Conditions: 1.8 V ≤ VCC0 = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +85°C
Item Symbol
FCLK = 1 MHz FCLK = 8 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time 1 byte t
DP1
— 135 1197 — 86.5 823 μs
Erasure time 1 Kbyte t
DE1K
— 19.6 501 — 8.0 265 ms
8 Kbyte t
DE8K
— 120 2558 — 27.7 669 ms
Blank check time 1 byte t
DBC1
— — 85.0 — — 50.9 μs
1 Kbyte t
DBC1K
— — 0.72 — — 1.45 ms
Erase operation forced stop time t
DSED
— — 28.0 — — 21.3 μs
DataFlash STOP recovery time t
DSTOP
0.72 — — 0.72 — — μs
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