Renesas RX Series User Manual

R01UH0823EJ0100 Rev.1.00 Page 1741 of 1823
Jul 31, 2019
RX23W Group 50. Flash Memory (FLASH)
50.12 Rewriting by Self-Programming
50.12.1 Overview
The MCU supports rewriting of the flash memory by the user program. The ROM and E2 DataFlash can be rewritten by
preparing a routine to rewrite the flash memory (flash rewrite routine) in the user program.
When rewriting the E2 DataFlash, the BGO can be used to execute the flash rewrite routine on the ROM. The E2
DataFlash can also be rewritten by executing the flash rewrite routine that is transferred on the RAM in advance.
Figure 50.43 Self-Programming Overview
Flash rewrite routine
Flash informationErase/program
Note 1. The ROM cannot be rewritten by executing the flash rewrite routine on the ROM.
ROM or E2 DataFlash
On-chip RAM or on-chip ROM
*1

Renesas RX Series Specifications

General

Core	RXv1, RXv2, RXv3
Flash Memory	Up to 8 MB
RAM	Up to 1 MB
Operating Voltage	1.62V to 5.5V
Operating Temperature	-40°C to +85°C or +105°C
Package	BGA, LQFP
ADC Resolution	12-bit
DAC Resolution	12-bit
Communication Interfaces	SCI, SPI, I2C, USB, Ethernet, CAN
Architecture	32-bit
Security Features	Memory Protection Unit (MPU)