32-Word Flash Memory Write Buffer
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SWRU543–January 2019
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On-Chip Parallel Flash
To mass-erase the flash memory:
1. Write the flash memory write key and the MERASE bit (a value of 0xA442.0004) to the FMC register.
2. Poll the FMC register until the MERASE bit is cleared.
21.4 32-Word Flash Memory Write Buffer
A 32-word write buffer provides the capability to perform faster write accesses to the flash memory. The
data for the buffered write is written to the Flash Write Buffer (FWBn) registers.
The registers are 32-word-aligned with flash memory, and therefore the register FWB0 corresponds with
the address in the FMA register where bits [6:0] are all 0. FWB1 corresponds with the address in FMA +
0x4 and so forth. Only the FWBn registers that have been updated since the previous buffered flash
memory write operation are written. The Flash Write Buffer Valid (FWBVAL) register shows which
registers have been written since the last buffered flash memory write operation. This register contains a
bit for each of the 32 FWBn registers, where bit[n] of FWBVAL corresponds to FWBn. The FWBn register
has been updated if the corresponding bit in the FWBVAL register is set.
To program 32 words with one buffered flash memory, write operation:
1. Write the source data to the FWBn registers.
2. Write the target address to the FMA register. This must be a 32-word aligned address (that is, bits [6:0]
in FMA must be 0s).
3. Write the flash memory write key and the WRBUF bit to the FMC2 register.
4. Poll the FMC register until the WRITE bit is cleared.
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