NXP Semiconductors MPC5606S - Page 561

Flash Memory
MPC5606S Microcontroller Reference Manual, Rev. 7
Freescale Semiconductor 559
30 ESUS: Erase SUSpend (Read/Write)
ESUS is used to indicate that the flash module is in Erase Suspend or in the process of entering a
Suspend state. The flash module is in Erase Suspend when ESUS=1 and DONE=1.
ESUS can be set high only when ERS and EHV are high and PGM is low.
A 0 to 1 transition of ESUS starts the sequence which sets DONE and places the flash memory in Erase
Suspend. The flash module enters Suspend within t
ESUS
of this transition.
ESUS can be cleared only when DONE and EHV are high and PGM is low.
A 1 to 0 transition of ESUS with EHV=1 starts the sequence which clears DONE and returns the Module
to Erase.
The flash module cannot exit Erase Suspend and clear DONE while EHV is low.
ESUS is cleared on reset.
0: Erase sequence is not suspended.
1: Erase sequence is suspended.
31 EHV: Enable High Voltage (Read/Write)
The EHV bit enables the flash module for a high voltage Program/Erase operation.
EHV is cleared on reset.
EHV must be set after an interlock write to start a Program/Erase sequence. EHV may be set under one
of the following conditions:
Erase (ERS=1, ESUS=0, UT0.AIE=0)
Program (ERS=0, ESUS=0, PGM=1, UT0.AIE=0)
In normal operation, a 1 to 0 transition of EHV with DONE high and ESUS low terminates the current
Program/Erase high voltage operation.
When an operation is aborted, there is a 1 to 0 transition of EHV with DONE low and the eventual
Suspend bit low. An abort causes the value of PEG to be cleared, indicating a failing Program/Erase;
address locations being operated on by the aborted operation contain indeterminate data after an abort.
A suspended operation cannot be aborted.

Aborting a high voltage operation will leave the flash module addresses in an undeterminate data state.
This may be recovered by executing an Erase on the affected blocks.
EHV may be written during Suspend. EHV must be high to exit Suspend. EHV may not be written after
ESUS is set and before DONE transitions high. EHV may not be cleared after ESUS is cleared and before
DONE transitions low.
0: Flash is not enabled to perform an high voltage operation.
1: Flash is enabled to perform an high voltage operation.
Table 17-9. Array Space Size
SIZE2-0 Array Space Size
000 128KB
001 256KB
010 512KB
011 Reserved (1024KB)
100 Reserved (1536KB)
101 Reserved (2048KB)
110 64KB
111 Reserved
Table 17-8. MCR field descriptions (continued)
Field Description