Flash Memory
MPC5606S Microcontroller Reference Manual, Rev. 7
Freescale Semiconductor 557
17 RWE: Read-while-Write event Error (Read/Clear)
RWE provides information on previous reads when a Modify operation is on going. If a RWW Error occurs,
the RWE bit will be set to 1. Read-While-Write Error means that a read access to the flash memory matrix
has occurred while the FPEC was performing a program or erase operation or an array integrity check.
This bit must then be cleared, or a reset must occur before this bit will return to a 0 state. This bit may not
be set to 1 by the user.
If RWE is not set, or remains 0, this indicates that all previous RWW reads (from the last reset, or clearing
of RWE) were correct.
Since this bit is an error flag, it must be cleared to 0 by writing 1 to the register location. A write of 0 will
have no effect.
0: Reads are occurring normally.
1: A RWW error occurred during a previous read.
18:19 Reserved (Read Only)
Write these bits has no effect and read these bits always outputs 0.
20 PEAS: Program/Erase Access Space (Read Only)
PEAS is used to indicate which space is valid for Program and Erase operations: main array space or
shadow/test space.
PEAS=0 indicates that the main address space is active for all flash module program and erase
operations.
PEAS=1 indicates that the test or shadow address space is active for program and erase.
The value in PEAS is captured and held with the first interlock write done for Modify operations. The value
of PEAS is retained between sampling events (for example, subsequent first interlock writes).
0: Shadow/Test address space is disabled for program/erase and main address space enabled.
1: Shadow/Test address space is enabled for program/erase and main address space disabled.
21 DONE: modify operation DONE (Read Only)
DONE indicates if the flash module is performing a high voltage operation.
DONE is set to 1 on termination of the flash module reset.
DONE is cleared to 0 immediately after a 0 to 1 transition of EHV, which initiates a high voltage operation,
or after resuming a suspended operation.
DONE is set to 1 at the end of program and erase high voltage sequences.
DONE is set to 1 (within t
PABT
or t
EABT
, equal to P/E Abort Latency) after a 1 to 0 transition of EHV,
which aborts a high voltage Program/Erase operation.
DONE is set to 1 (within t
ESUS
, time equals to Erase Suspend Latency) after a 0 to 1 transition of ESUS,
which suspends an erase operation.
0: Flash is executing a high voltage operation.
1: Flash is not executing a high voltage operation.
Table 17-8. MCR field descriptions (continued)
Field Description
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