Texas Instruments TM4C1294NCPDT User Manual

27.12 Flash Memory
Table 27-32. Flash Memory Characteristics
UnitMaxNomMinParameter NameParameter
cycles--100,000Number of program/erase cycles
a
PE
CYC
years--20Data retention with 100% power-on hours at
T
J
=85˚C
T
RET
years--11Data retention with 10% power-on hours at
T
J
=125˚C and 90% power-on hours at T
J
=100˚C
T
RET_EXTEMP
µs30010030Program time for double-word-aligned (64 bits)
data
b
T
PROG64
ms158-Page erase time, <1k cycles
T
ERASE
ms4015-Page erase time, 10k cycles
ms50075-Page erase time, 100k cycles
ms2510-Mass erase time, <1k cycles
T
ME
ms7020-Mass erase time, 10k cycles
ms2500300-Mass erase time, 100k cycles
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
b. If programming fewer than 64 bits of data, the programming time is the same. For example, if only 32 bits of data need
to be programmed, the other 32 bits are masked off.
1847June 18, 2014
Texas Instruments-Production Data
Tiva
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TM4C1294NCPDT Microcontroller

Texas Instruments TM4C1294NCPDT Specifications

General

Brand	Texas Instruments
Model	TM4C1294NCPDT
Category	Microcontrollers
Language	English