Texas Instruments TM4C1294NCPDT - Page 628

DescriptionResetTypeNameBit/Field
Commit Register Value
This bit is used to commit writes to Flash-memory-resident registers
and to monitor the progress of that process.
DescriptionValue
A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous commit access is
complete.
0
Set this bit to commit (write) the register value to a
Flash-memory-resident register.
When read, a 1 indicates that the previous commit access is
not complete.
1
See “Non-Volatile Register Programming-- Flash Memory Resident
Registers” on page 613 for more information on programming
Flash-memory-resident registers.
0RWCOMT3
Mass Erase Flash Memory
This bit is used to mass erase the Flash main memory and to monitor
the progress of that process.
DescriptionValue
A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous mass erase access
is complete.
0
Set this bit to erase the Flash main memory.
When read, a 1 indicates that the previous mass erase access
is not complete.
1
For information on erase time, see “Flash Memory” on page 1847.
0RWMERASE2
Erase a Page of Flash Memory
This bit is used to erase a page of Flash memory and to monitor the
progress of that process.
DescriptionValue
A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous page erase access
is complete.
0
Set this bit to erase the Flash memory page specified by the
contents of the FMA register.
When read, a 1 indicates that the previous page erase access
is not complete.
1
For information on erase time, see “Flash Memory” on page 1847.
0RWERASE1
June 18, 2014628
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Internal Memory