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GPMC
7.1 GPMC
7.1.1 Introduction
The general-purpose memory controller (GPMC) is an unified memory controller dedicated to interfacing
external memory devices:
• Asynchronous SRAM-like memories and application-specific integrated circuit (ASIC) devices
• Asynchronous, synchronous, and page mode (only available in non-multiplexed mode) burst NOR flash
devices
• NAND Flash
• Pseudo-SRAM devices
7.1.1.1 GPMC Features
The general features of the GPMC module include:
• Data path to external memory device can be 16- or 8-bit wide
• 32-bit OCPIP 2.0 compliant core, single slave interface. Support non-wrapping and wrapping burst up
to 16x32bits.
• Up to 100 MHz external memory clock performance (single device)
• Support for the following memory types:
– External asynchronous or synchronous 8-bit width memory or device (non burst device)
– External asynchronous or synchronous 16-bit width memory or device
– External 16-bit non-multiplexed NOR Flash device
– External 16-bit address and data multiplexed NOR Flash device
– External 8-bit and 16-bit NAND flash device
– External 16-bit pSRAM device
• Up to 16-bit ECC support for NAND flash using BCH code (t=4, 8 or 16) or Hamming code for 8-bit or
16-bit NAND-flash, organized with page size of 512 bytes, 1K bytes, or more.
• Support 512M Bytes maximum addressing capability which can be divided into seven independent
chip-select with programmable bank size and base address on 16M Bytes, 32M Bytes, 64M Bytes, or
128M Bytes boundary
• Fully pipelined operation for optimal memory bandwidth usage
• Support external device clock frequency of 1, 2, 3 and 4 divider from L3 clock.
• Support programmable auto-clock gating when there is no access.
• Support Midlereq/SidleAck protocol
• Support the following interface protocols when communicating with external memory or external
devices.
– Asynchronous read/write access
– Asynchronous read page access (4-8-16 Word16)
– Synchronous read/write access
– Synchronous read burst access without wrap capability (4-8-16 Word16)
– Synchronous read burst access with wrap capability (4-8-16 Word16)
• Address and Data multiplexed access
• Each chip-select as independent and programmable control signal timing parameters for Setup and
Hold time. Parameters are set according to the memory device timing parameters, with one L3 clock
cycle timing granularity.
• Flexible internal access time control (wait state) and flexible handshake mode using external WAIT
pins monitoring (up to two WAIT pins)
• Support bus keeping
• Support bus turn around
251
SPRUH73H–October 2011–Revised April 2013 Memory Subsystem
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